Nonmagnetic semiconductor spin transistor
Identifieur interne : 00BF24 ( Main/Repository ); précédent : 00BF23; suivant : 00BF25Nonmagnetic semiconductor spin transistor
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Abstract
We propose a spin transistor using only nonmagnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). This device may also be used as a spin valve, or a magnetic field sensor. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nonmagnetic semiconductor spin transistor</title><author><name sortKey="Hall, K C" uniqKey="Hall K">K. C. Hall</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Lau, Wayne H" uniqKey="Lau W">Wayne H. Lau</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Gundogdu, K" uniqKey="Gundogdu K">K. Gundogdu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Flatte, Michael E" uniqKey="Flatte M">Michael E. Flatte</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Boggess, Thomas F" uniqKey="Boggess T">Thomas F. Boggess</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0404853</idno><date when="2003-10-06">2003-10-06</date><idno type="stanalyst">PASCAL 03-0404853 AIP</idno><idno type="RBID">Pascal:03-0404853</idno><idno type="wicri:Area/Main/Corpus">00C958</idno><idno type="wicri:Area/Main/Repository">00BF24</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Quantum well devices</term><term>Semiconductor quantum wells</term><term>Spin valve</term><term>k.p calculations</term><term>magnetoelectronics</term><term>spin polarised transport</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8535B</term><term>8575</term><term>7115</term><term>Etude expérimentale</term><term>Indium composé</term><term>Dispositif puits quantique</term><term>Gallium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Vanne spin</term><term>Calcul k.p</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We propose a spin transistor using only nonmagnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). This device may also be used as a spin valve, or a magnetic field sensor. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Nonmagnetic semiconductor spin transistor</s1></fA08><fA11 i1="01" i2="1"><s1>HALL (K. C.)</s1></fA11><fA11 i1="02" i2="1"><s1>LAU (Wayne H.)</s1></fA11><fA11 i1="03" i2="1"><s1>GUNDOGDU (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>FLATTE (Michael E.)</s1></fA11><fA11 i1="05" i2="1"><s1>BOGGESS (Thomas F.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>2937-2939</s1></fA20><fA21><s1>2003-10-06</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0404853</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We propose a spin transistor using only nonmagnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). 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